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BS170

Metal Oxide N-Channel Fet, Enhancement Type ; V-Mos, Logic Level, 60V, 0.5A, 0.83W

SEMICONDUCTORS SPECIFICATIONS
KIND	N-MOS
MAX VOLTAGE	60V
MAX CURRENT	500mA
POWER	350mW
PACKAGE	TO-92
R-DS	V(GS)=10V , 5 ohm

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