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2SA5551 IGBT TRANSISTORS IN SERIES DIODE
Silicon Npn Transistor ; Switching And Amplification, High-Voltage, 160V, 300mA, 630mW, 100MHz
| SEMICONDUCTORS SPECIFICATIONS | |
| KIND | |
| MAX VOLTAGE | 160V |
| MAX CURRENT | 300mA |
| POWER | 630mW |
| PACKAGE | TO-92 |
2N5551
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