2N5551 BJT TRANSISTORES
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2N5551 BJT TRANSISTORES

2SA5551 IGBT TRANSISTORS IN SERIES DIODE

Silicon Npn Transistor ; Switching And Amplification, High-Voltage, 160V, 300mA, 630mW, 100MHz
SEMICONDUCTORS SPECIFICATIONS
KIND
MAX VOLTAGE160V
MAX CURRENT300mA
POWER630mW
PACKAGETO-92

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2N5551

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  • Product Code: 2N5551-DIP
  • Availability: 470 & more
  • 5,400ریال
  • 50 or more 4,370ریال
  • 200 or more 4,000ریال
This product has a minimum quantity of 10
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